View BFR93AT_1219268.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

BFR93AT
NPN Silicon RF Transistor Preliminary data For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA
3
Junction temperature Ambient temperature Storage temperature
Thermal Resistance Junction - soldering point 2) RthJS
1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance
thJA
2 1
VPS05996
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR93AT
Maximum Ratings Parameter
Marking R2s
1=B
Pin Configuration 2=E 3=C
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Package SC75
Value 12 20 20 2 50 6 300 150 mW C mA Unit V
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 85C 1)
-65 ... 150 -65 ... 150
215
K/W
1
Aug-09-2001
BFR93AT
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 30 mA, VCE = 8 V hFE 50 100 200 IEBO 10 A ICBO 100 nA ICES 100 A V(BR)CEO 12 V Symbol min. Values typ. max. Unit
2
Aug-09-2001
BFR93AT
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. AC characteristics (verified by random sampling) Transition frequency IC = 30 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 5 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum available 1) IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain IC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz
1G ma
Unit max. 0.9 dB GHz pF
typ. 6 0.58 0.22 1.7
fT Ccb Cce Ceb F
4.5 -
Gma |S21e|2 -
2 3.3
-
15.5 10
-
13.5 7.5
-
= |S21 / S12 | (k-(k2-1)1/2 )
3
Aug-09-2001
BFR93AT
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 8.6752 20.011 1.5466 26.834 1.95 3.4649 3.1538 33.388 2.5184 0.72744 1.1061 0 3 fA V V fF ps mA V ns BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 137.63 0.33395 59 0.015129 7.2326 1.0075 0.70393 0.28319 0 0.34565 0 0 0.75935 A A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.93633 2619.3 0.88761 0.70823 0.043806 0.13193 0.5071 0.17765 1039.5 0.21422 0.75 1.11 300 fA fA mA -
V -
V fF V eV K
deg fF -
All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut fur Mobil-und Satellitentechnik (IMST)
Package Equivalent Circuit:
L1 =
C4 C1 L2 B L3 C
0.762 0.706 0.382 62 84 180 7 40 48
L2 = L3 = C1 =
C'
B'
Transistor Chip E'
C2 = C3 = C4 = C5 = C7 =
C6
C2
L1
C3
C5
fF fF
E
EHA07524
Valid up to 6GHz
For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes
4
Aug-09-2001
nH nH nH fF fF fF

BFR93AT
Total power dissipation Ptot = f (TS )
350
mW
250
P tot
200
TS
150
100
50
0 0
20
40
60
80
100
120 C
150
TS
Permissible Pulse Load RthJS = f (tp )
Permissible Pulse Load Ptotmax/P totDC = f (tp)
10 3
10 2
Ptotmax / PtotDC
RthJS
10 2
10 1
D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0
10 1
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
5
Aug-09-2001
BFR93AT
Collector-base capacitance Ccb = f (VCB ) f = 1MHz
Transition frequency f T = f (I C)
V CE = Parameter
1.4
pF GHz
7
8V 5V 3V 2V
1
5
Ccb
0.8
fT
4
0.6
3
1V
0.4
2
0.2
1
0 0
5
10
15
V
25
0 0
10
20
30
40
mA
60
VCB
IC
Power Gain Gma , Gms = f(IC )
f = 0.9GHz VCE = Parameter
19
Power Gain Gma, Gms = f(I C)
f = 1.8GHz VCE = Parameter
12
8V 5V dB 8V dB 3V 2V
G
3V 2V
13
G ma
6
5V
1V
10
3
1V
7 0
10
20
30
40
mA
60
0 0
10
20
30
40
mA
60
IC
IC
6
Aug-09-2001
BFR93AT
Power Gain Gma , Gms = f(VCE):_____
|S21|2 = f(VCE):--------f = Parameter
18
dB
Intermodulation Intercept Point IP3=f(IC)
(3rd order, Output, ZS=ZL=50) VCE = Parameter, f = 900MHz
35
IC=30mA
0.9GHz dBm 5V 4V
0.9GHz
14 12
G
1.8GHz
IP 3
25
3V
10
1.8GHz
8 20 6 4 2 0 0 10 0
2V
15
1V
3
6
V
12
10
20
30
40
mA
60
VCE
IC
Power Gain Gma , Gms = f(f)
VCE = Parameter
45
dB
Power Gain |S21|2= f(f)
V CE = Parameter
36
IC=30mA
dBm
IC =30mA
35 24 30
G
S21
18
25 20 15 10 5 0 0
8V 5V 3V 2V 1V
12
6
8V 5V 3V 2V 1V
0
1
2
3
4
5
GHz
7
-6 0
1
2
3
4
5
GHz
7
f
f
7
Aug-09-2001

▲Up To Search▲

Price & Availability of BFR93AT

	To Download BFR93AT Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .